DMN3033LDM-7

DMN3033 系列 30 V 33 mOhm N沟道 增强模式 Mosfet - SOT-26-6

最大源漏极电压Vds

Drain-Source Voltage | 30V

\---|---

栅源极击穿电压VBRGS

Gate-Source Voltage | 20V

漏极电流Vgs=0VIDSS

Drain Current | 6.9A

开启电压Vgsth Gate Threshold Voltage | 2.1v

耗散功率Pd

Power dissipation | 2W

描述与应用

Description & Applications | •低栅极电荷 •低RDS（ON）： •33mΩ的@VGS=10V •40mΩ的@VGS=4.5V •低输入/输出泄漏 •铅的设计免费/ RoHS规定（注3） •符合AEC-Q101标准的高可靠性 •"绿色"设备（注4）

得捷:
MOSFET N-CH 30V 6.9A SOT-26

贸泽:
MOSFET NMOS-SINGLE

艾睿:
Amplify electronic signals and switch between them with the help of Diodes Zetex&s;s DMN3033LDM-7 power MOSFET. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 30V 6.9A 6-Pin SOT-26 T/R

Verical:
Trans MOSFET N-CH 30V 6.9A Automotive 6-Pin SOT-26 T/R

Win Source:
MOSFET N-CH 30V 6.9A SOT-26