EMX2DXV6T5G

双NPN通用晶体管放大器 Dual NPN General Purpose Amplifier Transistor

- 双极 BJT - 阵列 2 NPN（双） 50V 100mA 180MHz 500mW 表面贴装型 SOT-563

立创商城:
EMX2DXV6T5G

得捷:
TRANS 2NPN 50V 0.1A SOT563

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN EMX2DXV6T5G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.

安富利:
Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R

Chip1Stop:
Trans GP BJT NPN 50V 0.1A Automotive 6-Pin SOT-563 T/R

Verical:
Trans GP BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R