双共基极 - 集电极偏置电阻晶体管NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary devices are housed in the SOT¿553 package which is ideal for low power surface mount applications where board space is at a premium.
Features
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额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
通道数 2
极性 NPN+PNP
耗散功率 0.5 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80
最大电流放大倍数hFE 35
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
额定电压 50 V
安装方式 Surface Mount
引脚数 5
封装 SOT-553-5
宽度 1.3 mm
封装 SOT-553-5
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 -
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
EMC3DXV5T5G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
EMC3DXV5T1 安森美 | 完全替代 | EMC3DXV5T5G和EMC3DXV5T1的区别 |
EMC3DXV5T1G 安森美 | 类似代替 | EMC3DXV5T5G和EMC3DXV5T1G的区别 |
EMC3DXV5T5 安森美 | 类似代替 | EMC3DXV5T5G和EMC3DXV5T5的区别 |