EMD5DXV6T5G

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EMD5DXV6T5G概述

SOT-563 NPN+PNP 50V 100mA

The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT¿563 package which is ideal for low power surface mount applications where board space is at a premium.

Features

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Simplifies Circuit Design
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Reduces Board Space
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Lead Free Solder Plating
EMD5DXV6T5G中文资料参数规格
技术参数

额定电压DC 50.0 V

额定电流 100 mA

无卤素状态 Halogen Free

极性 NPN+PNP

耗散功率 500 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 20

额定功率Max 500 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 500 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SOT-563

外形尺寸

封装 SOT-563

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Reduces Component Count

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买EMD5DXV6T5G
型号: EMD5DXV6T5G
描述:SOT-563 NPN+PNP 50V 100mA
替代型号EMD5DXV6T5G
型号/品牌 代替类型 替代型号对比

EMD5DXV6T5G

ON Semiconductor 安森美

当前型号

当前型号

EMD5DXV6T1

安森美

完全替代

EMD5DXV6T5G和EMD5DXV6T1的区别

锐单商城 - 一站式电子元器件采购平台