SOT-563 NPN+PNP 50V 100mA
The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The Dual Bipolar Digital Transistor eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT¿563 package which is ideal for low power surface mount applications where board space is at a premium.
Features
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额定电压DC 50.0 V
额定电流 100 mA
无卤素状态 Halogen Free
极性 NPN+PNP
耗散功率 500 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 20
额定功率Max 500 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563
封装 SOT-563
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Reduces Component Count
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
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EMD5DXV6T5G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
EMD5DXV6T1 安森美 | 完全替代 | EMD5DXV6T5G和EMD5DXV6T1的区别 |