2个P沟道 20V 3A
Amplify electronic signals and switch between them with the help of "s power MOSFET. Its maximum power dissipation is 1200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in depletion mode.
极性 P-CH
耗散功率 1.2 W
漏源极电压Vds 20 V
连续漏极电流Ids 3A
上升时间 21 ns
输入电容Ciss 320pF @10VVds
额定功率Max 1.2 W
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1200 mW
安装方式 Surface Mount
引脚数 8
封装 SOT-383
封装 SOT-383
材质 Silicon
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99