N/P 通道 MOSFET,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
双 N/P 通道 MOSFET,
立创商城:
ECH8668-TL-H
得捷:
MOSFET N/P-CH 20V 7.5A/5A ECH8
欧时:
ON Semiconductor 双 Si N/P沟道 MOSFET ECH8668-TL-H, 5 A,7.5 A, Vds=20 V, 8引脚 ECH封装
e络盟:
双路场效应管, MOSFET, 互补N与P沟道, 20 V, 7.5 A, 0.013 ohm, SOT-28FL, 表面安装
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The ECH8668-TL-H power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 1500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
ECH8668-TL-H Dual N/P-channel MOSFET Transistor, 5 A, 7.5 A, 20 V, 8-Pin ECH
安富利:
Trans MOSFET N/P-CH 20V 7.5A/5A 8-Pin ECH T/R
Chip1Stop:
Trans MOSFET N/P-CH 20V 7.5A/5A 8-Pin ECH T/R
Verical:
Trans MOSFET N/P-CH Si 20V 7.5A/5A 8-Pin ECH T/R
力源芯城:
7.5A,20V,N/P沟道MOSFET
无卤素状态 Halogen Free
针脚数 8
漏源极电阻 0.013 Ω
极性 N+P
耗散功率 1.5 W
阈值电压 1.3 V
漏源极电压Vds 20 V
连续漏极电流Ids 7.5A/5A
输入电容Ciss 1060pF @10VVds
额定功率Max 1.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.3 W
安装方式 Surface Mount
引脚数 8
封装 SMD-8
长度 2.9 mm
宽度 2.3 mm
高度 0.9 mm
封装 SMD-8
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ECH8668-TL-H ON Semiconductor 安森美 | 当前型号 | 当前型号 |
8668 三洋 | 功能相似 | ECH8668-TL-H和8668的区别 |