ECH8690-TL-H

ECH8690-TL-H图片1
ECH8690-TL-H图片2
ECH8690-TL-H概述

双路场效应管, MOSFET, N和P, 4.7 A, 60 V, 0.042 ohm, 10 V

Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH


得捷:
COMPLEMENTARY DUAL POWER MOSFET


立创商城:
ECH8690-TL-H


艾睿:
This ECH8690-TL-H power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.


安富利:
Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin ECH T/R


Verical:
Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin SOT-28FL T/R


ECH8690-TL-H中文资料参数规格
技术参数

针脚数 8

漏源极电阻 0.042 Ω

极性 N+P

耗散功率 1.8 W

漏源极电压Vds 60 V

连续漏极电流Ids 4.7A/3.5A

输入电容Ciss 955pF @20VVds

额定功率Max 1.5 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1800 mW

封装参数

安装方式 Surface Mount

引脚数 8

封装 SMD-8

外形尺寸

封装 SMD-8

物理参数

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买ECH8690-TL-H
型号: ECH8690-TL-H
描述:双路场效应管, MOSFET, N和P, 4.7 A, 60 V, 0.042 ohm, 10 V

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