双电阻器数字 NPN 晶体管,ROHM### Digital Transistors, ROHMResistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
- 双极 BJT - 阵列 - 预偏置 2 个 NPN 预偏压式(双) 50V 100mA 250MHz 150mW 表面贴装型 EMT6
得捷:
TRANS 2NPN PREBIAS 0.15W EMT6
立创商城:
EMH11T2R
欧时:
双电阻器数字 NPN 晶体管,ROHM### Digital Transistors, ROHM SemiconductorResistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
贸泽:
双极晶体管 - 预偏置 DUAL NPN 50V 50MA
e络盟:
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
艾睿:
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
安富利:
Trans Digital BJT NPN 100mA 6-Pin EMT T/R
Chip1Stop:
Trans Digital BJT NPN 100mA 6-Pin EMT T/R
Verical:
Trans Digital BJT NPN 50V 100mA 6-Pin EMT T/R
Win Source:
TRANS 2NPN PREBIAS 0.15W EMT6
额定电压DC 50.0 V
额定电流 50.0 mA
额定功率 0.15 W
极性 N-Channel, NPN
耗散功率 150 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 150 mW
直流电流增益hFE 30
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563
长度 1.7 mm
宽度 1.3 mm
高度 0.45 mm
封装 SOT-563
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
EMH11T2R ROHM Semiconductor 罗姆半导体 | 当前型号 | 当前型号 |
DDC114EH-7 美台 | 功能相似 | EMH11T2R和DDC114EH-7的区别 |