E28F640J3A-120

E28F640J3A-120图片1
E28F640J3A-120图片2
E28F640J3A-120概述

Flash Mem Parallel 56Pin TSOP

The 0.25 µ 3 Volt StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords 128-Mbit, 8 Mbytes or 4 Mwords 64-Mbit, and 4 Mbytes or 2 Mwords 32-Mbit. These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organized as one-hundred-twenty-eight 128-Kbyte 131,072 bytes erase blocks. The 64-Mbit device is organized as sixty-four 128-Kbyte erase blocks while the 32-Mbits device contains thirty-two 128-Kbyte erase blocks. Blocks are selectively and individually lockable and unlockable in system. A 128-bit protection register has multiple uses, including unique flash device identification.

E28F640J3A-120中文资料参数规格
封装参数

封装 TSSOP

外形尺寸

封装 TSSOP

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买E28F640J3A-120
型号: E28F640J3A-120
制造商: Intel 英特尔
描述:Flash Mem Parallel 56Pin TSOP
替代型号E28F640J3A-120
型号/品牌 代替类型 替代型号对比

E28F640J3A-120

Intel 英特尔

当前型号

当前型号

TE28F640J3C-120

英特尔

功能相似

E28F640J3A-120和TE28F640J3C-120的区别

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