FZT751TA

PNP硅平面高性能晶体管特点•低饱和电压•互补型FZT651

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -80V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −60V 集电极连续输出电流ICCollector CurrentIC| -3A 截止频率fTTranstion FrequencyfT| 140MHz 直流电流增益hFEDC Current GainhFE| 100~300 管压降VCE（sat）Collector-Emitter SaturationVoltage| −600mV/-0.6V 耗散功率PcPoWer Dissipation| 2W Description & Applications| PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • Low Saturation Voltage • Complementary Type FZT651 描述与应用| PNP硅平面高性能晶体管 特点 •低饱和电压 •互补型FZT651