FGB30N6S2D

600V ，开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description

The FGH30N6S2D, FGP30N6S2D, and are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS. These LGC devices shorten delay

times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

• Power Factor Correction PFC circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49336

Diode formerly Developmental Type TA49390