Trans IGBT Chip N-CH 330V 180A 390000mW 3Pin3+Tab TO-3PN Rail
General Description
Using Novel Trench IGBT Technology, ’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Features
• High Current Capability
• Low saturation voltage: VCEsat =1.03V @ IC = 40A
• High input impedance
• RoHS compliant
Applications
PDP SYSTEM