600V ,开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The , FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS. These LGC devices shorten delay
times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction PFC circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
额定电压DC 600 V
额定电流 45.0 A
极性 N-Channel
耗散功率 167000 mW
上升时间 17.0 ns
击穿电压集电极-发射极 600 V
反向恢复时间 46 ns
额定功率Max 167 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 167000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FGH30N6S2D Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRG4PC40UDPBF 英飞凌 | 功能相似 | FGH30N6S2D和IRG4PC40UDPBF的区别 |
IRG4PC40WPBF 英飞凌 | 功能相似 | FGH30N6S2D和IRG4PC40WPBF的区别 |
IRG4PF50WDPBF 英飞凌 | 功能相似 | FGH30N6S2D和IRG4PF50WDPBF的区别 |