FGH30N6S2D

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FGH30N6S2D概述

600V ,开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

General Description

The , FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS. These LGC devices shorten delay

times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

• Power Factor Correction PFC circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49336

Diode formerly Developmental Type TA49390

FGH30N6S2D中文资料参数规格
技术参数

额定电压DC 600 V

额定电流 45.0 A

极性 N-Channel

耗散功率 167000 mW

上升时间 17.0 ns

击穿电压集电极-发射极 600 V

反向恢复时间 46 ns

额定功率Max 167 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 167000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

高度 20.82 mm

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Unknown

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买FGH30N6S2D
型号: FGH30N6S2D
制造商: Fairchild 飞兆/仙童
描述:600V ,开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
替代型号FGH30N6S2D
型号/品牌 代替类型 替代型号对比

FGH30N6S2D

Fairchild 飞兆/仙童

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