FAIRCHILD SEMICONDUCTOR FQT5P10TF. 场效应管, MOSFET, P沟道, -100V, 1A SOT-223
The is a -100V P-channel QFET® MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
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- Low gate charge typical 6.3nC
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- Low Crss typical 18pF
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- 100% Avalanche tested
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- ±30V Gate to source voltage
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- 62.5°C/W Thermal resistance, junction to ambient
额定电压DC -100 V
额定电流 -1.00 A
通道数 1
针脚数 3
漏源极电阻 820 mΩ
极性 P-Channel
耗散功率 2 W
输入电容 250 pF
栅电荷 8.20 nC
漏源极电压Vds 100 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids -1.00 A, 1.00 mA
上升时间 70 ns
输入电容Ciss 250pF @25VVds
额定功率Max 2 W
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2W Tc
安装方式 Surface Mount
引脚数 3
封装 SOT-223-4
长度 6.5 mm
宽度 3.56 mm
高度 1.6 mm
封装 SOT-223-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQT5P10TF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
SFM9110TF 飞兆/仙童 | 功能相似 | FQT5P10TF和SFM9110TF的区别 |