FAIRCHILD SEMICONDUCTOR FQB30N06LTM 晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- .
- 100% Avalanche tested
- .
- 15nC Typical low gate charge
- .
- 50pF Typical low Crss
额定电压DC 60.0 V
额定电流 32.0 A
针脚数 3
漏源极电阻 0.027 Ω
极性 N-Channel
耗散功率 79 W
阈值电压 2.5 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 32.0 A
上升时间 210 ns
输入电容Ciss 1040pF @25VVds
额定功率Max 3.75 W
下降时间 110 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.75 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB30N06LTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQB30N06TM 飞兆/仙童 | 类似代替 | FQB30N06LTM和FQB30N06TM的区别 |
STB36NF06LT4 意法半导体 | 功能相似 | FQB30N06LTM和STB36NF06LT4的区别 |
NTB75N06T4G 安森美 | 功能相似 | FQB30N06LTM和NTB75N06T4G的区别 |