FAIRCHILD SEMICONDUCTOR FQB27P06TM 晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
The is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
- .
- Low gate charge
- .
- 100% Avalanche tested
- .
- 175°C Rated junction temperature
额定电压DC -60.0 V
额定电流 -27.0 A
通道数 1
针脚数 3
漏源极电阻 0.055 Ω
极性 P-Channel
耗散功率 120 W
漏源极电压Vds 60 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids -27.0 A
上升时间 185 ns
输入电容Ciss 1400pF @25VVds
额定功率Max 3.75 W
下降时间 90 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.75W Ta, 120W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB27P06TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQB27P06 飞兆/仙童 | 功能相似 | FQB27P06TM和FQB27P06的区别 |