FAIRCHILD SEMICONDUCTOR FQB34P10TM 晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- .
- 100% Avalanche tested
- .
- 85nC Typical low gate charge
- .
- 170pF Typical low Crss
额定电压DC -100 V
额定电流 -34.0 A
针脚数 2
漏源极电阻 0.049 Ω
极性 P-Channel
耗散功率 3.75 W
漏源极电压Vds 100 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 33.5 mA
上升时间 250 ns
输入电容Ciss 2910pF @25VVds
额定功率Max 3.75 W
下降时间 210 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.75W Ta, 155W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB34P10TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF5210STRLPBF 国际整流器 | 功能相似 | FQB34P10TM和IRF5210STRLPBF的区别 |
IRF5210SPBF 国际整流器 | 功能相似 | FQB34P10TM和IRF5210SPBF的区别 |
FQB34P10TM_F085 飞兆/仙童 | 功能相似 | FQB34P10TM和FQB34P10TM_F085的区别 |