FAIRCHILD SEMICONDUCTOR FQS4901TF 双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
The is a QFET® dual N-channel MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge
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- Low Crss 5pF
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- 100% Avalanche tested
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- ±25V Gate to source voltage
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- 0.45A Continuous drain current
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- 0.285A Pulsed drain current
额定电压DC 400 V
额定电流 450 mA
针脚数 8
漏源极电阻 3.2 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 4 V
输入电容 210 pF
栅电荷 7.50 nC
漏源极电压Vds 400 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 450 mA
输入电容Ciss 210pF @25VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOP-8
高度 1.5 mm
封装 SOP-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQS4901TF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS1DNC45 意法半导体 | 功能相似 | FQS4901TF和STS1DNC45的区别 |
FQS4901TF_NL 飞兆/仙童 | 功能相似 | FQS4901TF和FQS4901TF_NL的区别 |
FQS4901 安森美 | 功能相似 | FQS4901TF和FQS4901的区别 |