FAIRCHILD SEMICONDUCTOR FQS4903TF 双路场效应管, MOSFET, 双N沟道, 370 mA, 500 V, 6.2 ohm, 10 V, 4 V
The is a N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge
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- Low Crss 4.5pF
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- 100% Avalanche tested
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- ±25V Gate to source voltage
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- 0.37A Continuous drain current
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- 0.234A Pulsed drain current
额定电压DC 500 V
额定电流 370 mA
通道数 2
针脚数 8
漏源极电阻 6.2 Ω
极性 N-Channel
耗散功率 2 W
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 370 mA
上升时间 20 ns
输入电容Ciss 200pF @25VVds
额定功率Max 2 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
宽度 3.9 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQS4903TF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQS4903 安森美 | 功能相似 | FQS4903TF和FQS4903的区别 |