FAIRCHILD SEMICONDUCTOR FQB7P20TM_F085 晶体管, MOSFET, P沟道, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and withstand high energy pulse in the avalanche and communication mode. It is well suitable for high efficiency switching DC-to-DC converters.
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- Fast switching
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- Improved dV/dt capability
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- AEC-Q101 Qualified
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- 100% Avalanche tested
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- 19nC Typical low gate charge
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- 25pF Typical low Crss
针脚数 3
漏源极电阻 0.54 Ω
极性 P-Channel
耗散功率 90 W
漏源极电压Vds 200 V
连续漏极电流Ids 7.3A
上升时间 110 ns
输入电容Ciss 770pF @25VVds
额定功率Max 3.13 W
下降时间 42 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.13W Ta, 90W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB7P20TM_F085 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDB039N06 飞兆/仙童 | 功能相似 | FQB7P20TM_F085和FDB039N06的区别 |
FQB25N33TM_F085 飞兆/仙童 | 功能相似 | FQB7P20TM_F085和FQB25N33TM_F085的区别 |