FAIRCHILD SEMICONDUCTOR FQB6N80TM 功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 31nC
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- Low Crss 14pF
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- 100% avalanche tested
额定电压DC 800 V
额定电流 5.80 A
针脚数 3
漏源极电阻 1.5 Ω
极性 N-Channel
耗散功率 158 W
阈值电压 5 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 5.80 A
上升时间 70 ns
输入电容Ciss 1500pF @25VVds
额定功率Max 3.13 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.13W Ta, 158W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB6N80TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STB7NK80ZT4 意法半导体 | 功能相似 | FQB6N80TM和STB7NK80ZT4的区别 |