FAIRCHILD SEMICONDUCTOR FQT4N20LTF 晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
The is a N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low level gate drive requirements allowing direct operation from logic drives
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- 100% Avalanche tested
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- 4nC Typical low gate charge
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- 6pF Typical low Crss
额定电压DC 200 V
额定电流 850 mA
针脚数 3
漏源极电阻 1.1 Ω
极性 N-Channel
耗散功率 2.2 W
阈值电压 2 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 850 mA
上升时间 70 ns
输入电容Ciss 310pF @25VVds
额定功率Max 2.2 W
下降时间 40 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.2 W
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
长度 6.5 mm
宽度 3.56 mm
高度 1.6 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQT4N20LTF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STN4NF20L 意法半导体 | 功能相似 | FQT4N20LTF和STN4NF20L的区别 |
IRLM210ATF 飞兆/仙童 | 功能相似 | FQT4N20LTF和IRLM210ATF的区别 |
IRLM210A 飞兆/仙童 | 功能相似 | FQT4N20LTF和IRLM210A的区别 |