FAIRCHILD SEMICONDUCTOR FQD12N20LTM 晶体管, MOSFET, N沟道, 9 A, 200 V, 0.22 ohm, 10 V, 2 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
- .
- 100% Avalanche tested
- .
- 16nC Typical low gate charge
- .
- 17pF Typical low Crss
额定电压DC 200 V
额定电流 9.00 A
针脚数 3
漏源极电阻 220 mΩ
极性 N-Channel
耗散功率 2.5 W
阈值电压 2 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.00 A
上升时间 190 ns
输入电容Ciss 1080pF @25VVds
额定功率Max 2.5 W
下降时间 120 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD12N20LTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD2670 飞兆/仙童 | 类似代替 | FQD12N20LTM和FDD2670的区别 |
FQD18N20V2TM 飞兆/仙童 | 类似代替 | FQD12N20LTM和FQD18N20V2TM的区别 |
FQD12N20LTM_F085 飞兆/仙童 | 类似代替 | FQD12N20LTM和FQD12N20LTM_F085的区别 |