FAIRCHILD SEMICONDUCTOR FQT4N25TF 晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
The is a N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
- .
- 4.3nC Typical low gate charge
- .
- 4.8pF Typical low Crss
额定电压DC 250 V
额定电流 830 mA
针脚数 3
漏源极电阻 1.38 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 5 V
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 830 mA
上升时间 45 ns
输入电容Ciss 200pF @25VVds
额定功率Max 2.5 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
长度 6.7 mm
宽度 3.7 mm
高度 1.7 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQT4N25TF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQT4N25 飞兆/仙童 | 功能相似 | FQT4N25TF和FQT4N25的区别 |