FAIRCHILD SEMICONDUCTOR FQB19N20LTM 晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 31nC Typical low gate charge
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- 30pF Typical low Crss
额定电压DC 200 V
额定电流 21.0 A
针脚数 2
漏源极电阻 0.11 Ω
极性 N-Channel
耗散功率 3.13 W
阈值电压 2 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 21.0 mA
上升时间 300 ns
输入电容Ciss 2200pF @25VVds
额定功率Max 3.13 W
下降时间 180 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.13W Ta, 140W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99