FM25H20-DG

CYPRESS SEMICONDUCTOR  FM25H20-DG  芯片, 存储器, FRAM, 2MB, SPI, 3V, 40MHz, TDFN8

The is a 2MB non-volatile memory FRAM, employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.

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2MB Ferroelectric Random Access Memory F-RAM Logically Organized as 256 K x 8

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High-endurance 100 Trillion 1014 Read/Writes

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151-year Data Retention

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NoDelay™ Writes

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Advanced High-reliability Ferroelectric Process

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Very Fast Serial Peripheral Interface SPI

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Up to 40MHz Frequency

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Direct Hardware Replacement for Serial Flash and EEPROM

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Supports SPI Mode 0 0, 0 and Mode 3 1, 1

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Sophisticated Write Protection Scheme

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Hardware Protection Using Write Protect WP Pin

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Software Protection Using Write Disable Instruction

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Software Block Protection for 1/4, 1/2 or Entire Array

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Low-power consumption, 1mA active current at 1MHz, 80µA standby current, 3µA sleep mode current