FAIRCHILD SEMICONDUCTOR FDS8928A 双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV
The is a dual N/P-channel enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
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- High density cell design for extremely low RDS ON
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- High power and current handling capability in a widely used surface-mount package
额定电流 5.50 A
针脚数 8
漏源极电阻 0.025 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 670 mV
输入电容 1.13 nF
栅电荷 20.0 nC
漏源极电压Vds 30V, 20V
漏源击穿电压 30.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 5.50 A
上升时间 23.0 ns
输入电容Ciss 900pF @10VVds
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8928A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS8C5H30L 意法半导体 | 功能相似 | FDS8928A和STS8C5H30L的区别 |
IRF7319PBF 英飞凌 | 功能相似 | FDS8928A和IRF7319PBF的区别 |
AO4616 万代半导体 | 功能相似 | FDS8928A和AO4616的区别 |