FAIRCHILD SEMICONDUCTOR FDS9953A 双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
The is a PowerTrench® dual P-channel MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V to 20V. It is suitable for load-switch and battery protection applications.
- .
- Fast switching speed
- .
- Low gate charge
- .
- High performance Trench technology for extremely low RDS ON
- .
- High power and current handling capability
- .
- ±25V Gate to source voltage
- .
- ±2.9A Continuous drain current
- .
- ±10A Pulsed drain current
额定电压DC -30.0 V
额定电流 -2.90 A
针脚数 8
漏源极电阻 0.095 Ω
极性 P-Channel
耗散功率 2 W
输入电容 185 pF
栅电荷 2.50 nC
漏源极电压Vds 30 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 2.90 mA
上升时间 13 ns
输入电容Ciss 185pF @15VVds
额定功率Max 900 mW
下降时间 2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS9953A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NDS9953A 飞兆/仙童 | 类似代替 | FDS9953A和NDS9953A的区别 |
STS4DPF30L 意法半导体 | 功能相似 | FDS9953A和STS4DPF30L的区别 |