FAIRCHILD SEMICONDUCTOR FDS9958 双路场效应管, MOSFET, 双P沟道, -2.9 A, -60 V, 0.082 ohm, -10 V, -1.6 V
The is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
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- ±20V Gate to source voltage
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- -2.9A Continuous drain current
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- -12A Pulsed drain current
通道数 2
针脚数 8
漏源极电阻 0.082 Ω
极性 Dual P-Channel
耗散功率 2 W
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids -2.90 A
上升时间 3 ns
输入电容Ciss 1020pF @30VVds
额定功率Max 900 mW
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS9958 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS9958_F085 飞兆/仙童 | 类似代替 | FDS9958和FDS9958_F085的区别 |
SI4948BEY-T1-GE3 威世 | 功能相似 | FDS9958和SI4948BEY-T1-GE3的区别 |