FAIRCHILD SEMICONDUCTOR FDS6679 晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V
The is a P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers and battery chargers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC -30.0 V
额定电流 -13.0 A
针脚数 8
漏源极电阻 0.0073 Ω
极性 P-Channel
耗散功率 2.5 W
输入电容 3.94 nF
栅电荷 71.0 nC
漏源极电压Vds 30 V
漏源击穿电压 20.0 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 13.0 A
上升时间 10 ns
输入电容Ciss 3939pF @15VVds
额定功率Max 1 W
下降时间 65 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6679 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
TPS1100D 德州仪器 | 功能相似 | FDS6679和TPS1100D的区别 |
TPS1100DR 德州仪器 | 功能相似 | FDS6679和TPS1100DR的区别 |
FDS4435BZ 安森美 | 功能相似 | FDS6679和FDS4435BZ的区别 |