FAIRCHILD SEMICONDUCTOR FDS8949 双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
The is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 40.0 V
额定电流 6.00 A
针脚数 8
漏源极电阻 0.021 Ω
极性 N-Channel, Dual N-Channel
耗散功率 2 W
阈值电压 1.9 V
输入电容 955 pF
栅电荷 11.0 nC
漏源极电压Vds 40 V
漏源击穿电压 40.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.00 A
上升时间 5.00 ns
输入电容Ciss 955pF @20VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8949 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS8949_F085 飞兆/仙童 | 类似代替 | FDS8949和FDS8949_F085的区别 |