FAIRCHILD SEMICONDUCTOR FDS3590 晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- Low gate charge
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 80.0 V
额定电流 6.50 A
通道数 1
针脚数 8
漏源极电阻 0.032 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 4 V
输入电容 1.18 nF
栅电荷 25.0 nC
漏源极电压Vds 80 V
漏源击穿电压 80.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.50 A
上升时间 8 ns
输入电容Ciss 1180pF @40VVds
额定功率Max 1 W
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS3590 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS4NF100 意法半导体 | 功能相似 | FDS3590和STS4NF100的区别 |
SI4896DY-T1-E3 威世 | 功能相似 | FDS3590和SI4896DY-T1-E3的区别 |