FAIRCHILD SEMICONDUCTOR FDN5618P 晶体管, MOSFET, P沟道, -1.25 A, -60 V, 170 mohm, -10 V, 20 V
The from is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.
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- High performance trench technology for extremely low RdsON
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- Drain to source voltage Vds of -60V
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- Gate to source voltage of ±20V
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- Continuous drain current Id of -1.25A
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- Power dissipation pd of 500mW
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- Low on state resistance of 185mohm at Vgs -4.5V
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- Operating junction temperature range from -55°C to 150°C
额定电压DC -60.0 V
额定电流 -1.25 A
针脚数 3
漏源极电阻 170 mΩ
极性 P-Channel
耗散功率 500 mW
阈值电压 20 V
输入电容 430 pF
栅电荷 8.60 nC
漏源极电压Vds 60 V
漏源击穿电压 -200 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 1.20 A
上升时间 8 ns
输入电容Ciss 430pF @30VVds
额定功率Max 460 mW
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.92 mm
宽度 1.4 mm
高度 0.94 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDN5618P Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDN5618P_NL 飞兆/仙童 | 功能相似 | FDN5618P和FDN5618P_NL的区别 |