FAIRCHILD SEMICONDUCTOR FDS8958A_F085 双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
The is a dual N/P-channel MOSFET advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- High power and current handling capability in a widely used surface-mount package
针脚数 8
漏源极电阻 0.019 Ω
极性 N-Channel, P-Channel
耗散功率 2 W
阈值电压 1.9 V
漏源极电压Vds 30 V
连续漏极电流Ids 7A/5A
输入电容Ciss 575pF @15VVds
额定功率Max 900 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8958A_F085 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS8958A 飞兆/仙童 | 类似代替 | FDS8958A_F085和FDS8958A的区别 |
IRF7319TRPBF 英飞凌 | 功能相似 | FDS8958A_F085和IRF7319TRPBF的区别 |
STS8C5H30L 意法半导体 | 功能相似 | FDS8958A_F085和STS8C5H30L的区别 |