FDT439N

FAIRCHILD SEMICONDUCTOR  FDT439N  晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV

The is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is Semiconductor"s high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.

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Switching loss improvements

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Lower conduction loss

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100% Avalanche tested

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Smaller stored energy in dynamic characteristics

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A lower gate charge Qg performance

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Improved system reliability in PFC and soft switching topologies