FAIRCHILD SEMICONDUCTOR FDD6680A 场效应管, MOSFET, N通道, 30V, 56A
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDSONin a small package.
Features
• 56 A, 30 V RDSON= 9.5 mΩ@ VGS= 10 V
RDSON= 13 mΩ@ VGS= 4.5 V
• Low gate charge 23nC typ.
• Fast Switching
• High performance trench technology for extremely low RDSON
针脚数 3
漏源极电阻 12.5 mΩ
极性 N-Channel
耗散功率 50 W
阈值电压 1.8 V
漏源极电压Vds 30 V
漏源击穿电压 -60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 56.0 A
上升时间 9 ns
输入电容Ciss 1425pF @15VVds
额定功率Max 1.3 W
下降时间 13 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 2.8W Ta, 60W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD6680A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD8880 飞兆/仙童 | 类似代替 | FDD6680A和FDD8880的区别 |