FDT457N

FAIRCHILD SEMICONDUCTOR  FDT457N  晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V

最大源漏极电压Vds Drain-Source Voltage| 30v \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.06Ω/Ohm 5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-3V 耗散功率Pd Power Dissipation| 3W Description & Applications| 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDSON in a small SOT23 footprint. ’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDSON specifications. The result is higher overall efficiency with less board space. High density cell design for extremely low RDSON .High power and current handling capability in a widely used surface mount package. 描述与应用| 60V N-沟道PowerTrench MOSFET 概述 此N沟道MOSFET已专门设计 以提高整体效率的DC / DC转换器的使用 同步或传统开关PWM控制器。 在一个小SOT23 MOSFET具有非常低的RDS（ON） 足迹。飞兆半导体的PowerTrench技术提供了更快的开关速度比其他的MOSFET具有可比性 RDS（ON）规格。其结果是更少的电路板空间与更高的整体效率。 高密度电池设计极低的RDS（ON）一种广泛使用的高功率和电流处理能力表面贴装封装