FAIRCHILD SEMICONDUCTOR FDP032N08 晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
针脚数 3
漏源极电阻 0.0025 Ω
极性 N-Channel
耗散功率 375 W
阈值电压 3.5 V
漏源极电压Vds 75 V
连续漏极电流Ids 235A
输入电容Ciss 15160pF @25VVds
额定功率Max 375 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 375W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 15.38 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDP032N08 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP210N75F6 意法半导体 | 功能相似 | FDP032N08和STP210N75F6的区别 |
IRF2907ZPBF 国际整流器 | 功能相似 | FDP032N08和IRF2907ZPBF的区别 |
PHP160NQ08T,127 恩智浦 | 功能相似 | FDP032N08和PHP160NQ08T,127的区别 |