FAIRCHILD SEMICONDUCTOR FDG6332C 双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
The is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- Small footprint
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- Low profile
额定电流 700 mA
针脚数 6
漏源极电阻 0.18 Ω
极性 N-Channel, P-Channel
耗散功率 300 mW
阈值电压 1.1 V
输入电容 114 pF
栅电荷 1.40 nC
漏源极电压Vds 20 V
漏源击穿电压 ±20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 700 mA
上升时间 14.0 ns
输入电容Ciss 113pF @10VVds
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.3 W
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
长度 2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-70-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDG6332C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDG6332C_F085 飞兆/仙童 | 类似代替 | FDG6332C和FDG6332C_F085的区别 |
FDG6332C_NL 飞兆/仙童 | 功能相似 | FDG6332C和FDG6332C_NL的区别 |