FAIRCHILD SEMICONDUCTOR FDD6N50TM_WS 晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 12.8nC Typical low gate charge
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- 9pF Typical low Crss
针脚数 3
漏源极电阻 0.76 Ω
极性 N-Channel
耗散功率 89 W
阈值电压 5 V
漏源极电压Vds 500 V
连续漏极电流Ids 6A
上升时间 55 ns
输入电容Ciss 9400pF @25VVds
额定功率Max 89 W
下降时间 35 ns
工作温度Max 150 ℃
耗散功率Max 89W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD6N50TM_WS Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD6N50TM 飞兆/仙童 | 类似代替 | FDD6N50TM_WS和FDD6N50TM的区别 |
FDD6N50TM_F085 飞兆/仙童 | 类似代替 | FDD6N50TM_WS和FDD6N50TM_F085的区别 |
STD7N52K3 意法半导体 | 功能相似 | FDD6N50TM_WS和STD7N52K3的区别 |