FAIRCHILD SEMICONDUCTOR FDC637BNZ 晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
The is a 2.5V specified N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- Manufactured using green packaging material
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- Halide-free
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- >2kV Typical HBM ESD protection level
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- 8nC Typical low gate charge
针脚数 6
漏源极电阻 0.021 Ω
极性 N-Channel
耗散功率 1.6 W
阈值电压 800 mV
漏源极电压Vds 20 V
连续漏极电流Ids 6.2A
上升时间 6 ns
输入电容Ciss 895pF @10VVds
额定功率Max 800 mW
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC637BNZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC655BN 飞兆/仙童 | 类似代替 | FDC637BNZ和FDC655BN的区别 |
NTUD3170NZT5G 安森美 | 功能相似 | FDC637BNZ和NTUD3170NZT5G的区别 |
SI3460DDV-T1-GE3 威世 | 功能相似 | FDC637BNZ和SI3460DDV-T1-GE3的区别 |