FAIRCHILD SEMICONDUCTOR FDC3512 晶体管, MOSFET, N沟道, 3 A, 80 V, 0.056 ohm, 10 V, 2.4 V
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- Fast switching speed
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- 13nC Typical low gate charge
额定电压DC 80.0 V
额定电流 3.00 A
通道数 1
针脚数 6
漏源极电阻 0.056 Ω
极性 N-Channel
耗散功率 1.6 W
阈值电压 2.4 V
输入电容 634 pF
栅电荷 13.0 nC
漏源极电压Vds 80 V
漏源击穿电压 80 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 3.00 A
上升时间 3 ns
输入电容Ciss 634pF @40VVds
额定功率Max 800 mW
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6W Ta
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC3512 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC3512_F095 飞兆/仙童 | 类似代替 | FDC3512和FDC3512_F095的区别 |