FAIRCHILD SEMICONDUCTOR FDB44N25TM 晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power and ATX.
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- 100% Avalanche tested
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- 47nC Typical low gate charge
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- 60pF Typical low Crss
额定电压DC 250 V
额定电流 44.0 A
额定功率 307 W
针脚数 2
漏源极电阻 0.058 Ω
极性 N-Channel
耗散功率 307 W
阈值电压 5 V
输入电容 2.87 nF
栅电荷 61.0 nC
漏源极电压Vds 250 V
栅源击穿电压 250 V
连续漏极电流Ids 44.0 A
上升时间 400 ns
输入电容Ciss 2870pF @25VVds
额定功率Max 307 W
下降时间 115 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 307 W
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.67 mm
宽度 11.33 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB44N25TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STB50N25M5 意法半导体 | 功能相似 | FDB44N25TM和STB50N25M5的区别 |