FAIRCHILD SEMICONDUCTOR FDC655BN 晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
The is a logic level single N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimized ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
额定电压DC 30.0 V
额定电流 6.30 A
针脚数 6
漏源极电阻 0.021 Ω
极性 N-Channel
耗散功率 1.6 W
阈值电压 1.9 V
输入电容 570 pF
栅电荷 10.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.30 A
上升时间 4 ns
输入电容Ciss 570pF @15VVds
额定功率Max 800 mW
下降时间 3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6 W
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC655BN Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDC634P 飞兆/仙童 | 类似代替 | FDC655BN和FDC634P的区别 |
FDC637BNZ 飞兆/仙童 | 类似代替 | FDC655BN和FDC637BNZ的区别 |