FAIRCHILD SEMICONDUCTOR FDS6875 双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
The is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±8V Gate to source voltage
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- -6A Continuous drain current
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- -20A Pulsed drain current
额定电压DC -20.0 V
额定电流 -6.00 A
通道数 2
针脚数 8
漏源极电阻 0.024 Ω
极性 P-Channel
耗散功率 2 W
输入电容 2.25 nF
栅电荷 23.0 nC
漏源极电压Vds 20 V
漏源击穿电压 20 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids -6.00 A
上升时间 15 ns
输入电容Ciss 2250pF @10VVds
额定功率Max 900 mW
下降时间 35 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6875 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS9933BZ 飞兆/仙童 | 类似代替 | FDS6875和FDS9933BZ的区别 |
SI4943BDY-T1-E3 威世 | 功能相似 | FDS6875和SI4943BDY-T1-E3的区别 |
FDS6875_NL 飞兆/仙童 | 功能相似 | FDS6875和FDS6875_NL的区别 |