FAIRCHILD SEMICONDUCTOR FDS6892A 双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 18 mohm, 4.5 V, 900 mV
The is a dual N-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- .
- Low gate charge
- .
- High performance Trench technology for extremely low RDS ON
- .
- High power and current handling capability
- .
- ±12V Gate to source voltage
- .
- 7.5A Continuous drain current
- .
- 30A Pulsed drain current
额定电压DC 20.0 V
额定电流 7.50 A
通道数 2
针脚数 8
漏源极电阻 18 mΩ
极性 N-Channel, Dual N-Channel
耗散功率 2 W
阈值电压 900 mV
输入电容 1.33 nF
栅电荷 12.0 nC
漏源极电压Vds 20 V
漏源击穿电压 20 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 7.50 A
上升时间 15 ns
输入电容Ciss 1333pF @10VVds
额定功率Max 900 mW
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6892A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS9926A 飞兆/仙童 | 类似代替 | FDS6892A和FDS9926A的区别 |
IRF7313TRPBF 英飞凌 | 功能相似 | FDS6892A和IRF7313TRPBF的区别 |
IRF7314TRPBF 英飞凌 | 功能相似 | FDS6892A和IRF7314TRPBF的区别 |