FAIRCHILD SEMICONDUCTOR FDS6699S 晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
The is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. It includes an integrated Schottky diode using "s monolithic SyncFET™ technology.
- .
- High performance Trench technology for extremely low RDS ON and fast switching
- .
- High power and current handling capability
- .
- 100% RG gate resistance tested
额定电压DC 30.0 V
额定电流 21.0 A
通道数 1
针脚数 8
漏源极电阻 3.6 mΩ
极性 N-Channel
耗散功率 2.5 mW
阈值电压 1.4 V
输入电容 3.61 nF
栅电荷 65.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 21.0 A
上升时间 12 ns
输入电容Ciss 3610pF @15VVds
额定功率Max 1 W
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6699S Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS6299S 飞兆/仙童 | 类似代替 | FDS6699S和FDS6299S的区别 |
FDS7066N3 飞兆/仙童 | 类似代替 | FDS6699S和FDS7066N3的区别 |
SI4164DY-T1-GE3 Vishay Siliconix | 功能相似 | FDS6699S和SI4164DY-T1-GE3的区别 |