FAIRCHILD SEMICONDUCTOR FDMA1032CZ 双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.037 ohm, 4.5 V, 1 V
The is a dual N/P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N and P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- .
- Low profile
- .
- Halogen-free
- .
- ±12V Gate to source voltage
- .
- -3.1A Continuous drain current
- .
- 6A Pulsed drain current
额定电压DC 20.0 V
额定电流 3.70 A
针脚数 6
漏源极电阻 0.037 Ω
极性 N-Channel, P-Channel
耗散功率 1.4 W
阈值电压 1 V
输入电容 340 pF
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 3.70 A
输入电容Ciss 340pF @10VVds
额定功率Max 700 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 6
封装 MicroFET-6
长度 2 mm
宽度 2 mm
高度 0.75 mm
封装 MicroFET-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDMA1032CZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDMA1027PT 飞兆/仙童 | 功能相似 | FDMA1032CZ和FDMA1027PT的区别 |