FAIRCHILD SEMICONDUCTOR FDC6561AN 双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
The is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
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- Low gate charge
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- Very fast switching
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- Small footprint
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- Low profile
额定电压DC 30.0 V
额定电流 2.50 A
针脚数 6
漏源极电阻 0.082 Ω
极性 N-Channel, Dual N-Channel
耗散功率 960 mW
阈值电压 1.8 V
输入电容 220 pF
栅电荷 2.30 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 2.50 A
上升时间 10.0 ns
输入电容Ciss 220pF @15VVds
额定功率Max 700 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 0.96 W
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 3 mm
宽度 1.7 mm
高度 1 mm
封装 TSOT-23-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDC6561AN Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
SI3932DV-T1-GE3 威世 | 功能相似 | FDC6561AN和SI3932DV-T1-GE3的区别 |
SI3948DV 飞兆/仙童 | 功能相似 | FDC6561AN和SI3948DV的区别 |
FDC6561AN_NL 飞兆/仙童 | 功能相似 | FDC6561AN和FDC6561AN_NL的区别 |