FAIRCHILD SEMICONDUCTOR FDB52N20TM 晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power and ATX.
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- 100% Avalanche tested
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- 49nC Typical low gate charge
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- 66pF Typical low Crss
额定电压DC 200 V
额定电流 52.0 A
针脚数 2
漏源极电阻 0.041 Ω
极性 N-Channel
耗散功率 357 W
阈值电压 5 V
输入电容 2.90 nF
栅电荷 63.0 nC
漏源极电压Vds 200 V
栅源击穿电压 200 V
连续漏极电流Ids 52.0 A
上升时间 175 ns
输入电容Ciss 2900pF @25VVds
额定功率Max 357 W
下降时间 29 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 357 W
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 9.98 mm
宽度 10.16 mm
高度 4.572 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB52N20TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STB40NF20 意法半导体 | 功能相似 | FDB52N20TM和STB40NF20的区别 |
STB30NF20 意法半导体 | 功能相似 | FDB52N20TM和STB30NF20的区别 |
APT20M45SVRG 美高森美 | 功能相似 | FDB52N20TM和APT20M45SVRG的区别 |